NTA4151PT1G
Manufacturer:
On Semiconductor
Mfr.Part #:
NTA4151PT1G
Datasheet:
Description:
MOSFETs SC-75-3 SMD/SMT P-Channel number of channels:1 301 mW -20 V Continuous Drain Current (ID):760 mA 2.1 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -20 V |
| Length | 1.65 mm |
| Width | 900 µm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 260 mΩ |
| Height | 800 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | -760 mA |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 301 mW |
| Power Dissipation | 301 mW |
| Threshold Voltage | -450 mV |
| Number of Channels | 1 |
| Input capacitance | 156 pF |
| Continuous Drain Current (ID) | 760 mA |
| Rds On Max | 360 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Type(Transistor Polarity) | P-Channel |
| Turn-On Delay Time | 8 ns |
| Turn-Off Delay Time | 29 ns |
| Element Configuration | Single |
| Fall Time | 8.2 ns |
| Rise Time | 8.2 ns |
| Gate Charge | 2.1 nC |
| Drain to Source Resistance | 490 mΩ |
| Gate to Source Voltage (Vgs) | 6 V |
| Drain to Source Breakdown Voltage (Vds) | -20 V |
| Schedule B | 8541210080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 1.2 V |
Stock: 2015
Distributors
pcbx
pcbxUnit Price$0.08582
Ext.Price$0.08582
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.08582 | $0.08582 |
| 10 | $0.04291 | $0.42910 |
| 50 | $0.03876 | $1.93800 |
| 100 | $0.03502 | $3.50200 |
| 500 | $0.03154 | $15.77000 |
| 1000 | $0.02840 | $28.40000 |
| 3000 | $0.02558 | $76.74000 |
| 5000 | $0.02185 | $109.25000 |